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AOD4128 N-Channel Enhancement Mode Field Effect Transistor
General Description The AOD4128 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. The device can also be used in PWM, load switching and general purpose applications. Standard Product AOD412 8 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 25V (VGS = 10V) ID = 60 A RDS(ON) < 4 m (VGS = 10V) RDS(ON) < 7 m (VGS = 4.5V)
TO-252 D-PAK
D
Top View Drain Connected to Tab
G S
G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25C Power Dissipation Power Dissipation
B C
Maximum 25 20 60 60 165 45 304 75 37 2.0 1.3 -55 to 175
Units V V
TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG
A
mJ W W C
TC=100C TA=25C TA=70C
A
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B
Symbol t 10s Steady State Steady State RJA RJC
Typ 18 50 1
Max 25 60 2
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4128
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=25V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A, VGS=0V Diode Forward Voltage G Maximum Body-Diode Continuous Current TJ=125C 1.3 165 3.4 5.0 5.8 55 0.7 1 60 3578 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 731 438 2.5 61.8 VGS=10V, VDS=12.5V, ID=20A 29.8 8.5 12.9 11.6 VGS=10V, VDS=12.5V, RL=0.63, RGEN=3 IF=20A, dI/dt=100A/s 17.7 45 20 39 32 48 4300 950 615 4 80 39 4 6 7 1.6 Min 25 1 5 100 2.5 Typ Max Units V uA nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Re0: June. 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4128
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
165 150 135 120 105 ID(A) 90 75 60 45 30 15 0 0 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 1 5 VGS=3V 3.5V 5V 4V ID(A) 40 30 20 10 0 0 2 3 VGS(Volts) Figure 2: Transfer Characteristics 1 4 125C 10V 4.5V 50 60 VDS=5V
25C -40C
8.0 7.0 6.0 5.0 4.0 3.0 2.0 0 5 10 15 20 25 30 VGS=10V VGS=4.5V
1.8 ID=20A Normalized On-Resistance 1.6 VGS=10V
RDS(ON) (m)
1.4
VGS=4.5V
1.2
1
0.8 -50 0 50 100 150 200 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 12 ID=20A 10 125C
1.0E+01 1.0E+00 IS (A) 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 25C -40C
125C
RDS(ON) (m)
8
TC=100C
6
=25C TA25C
4 -40C 2 2 4 6 8 10
-55 to 175
0.0
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics
0.2
0.4
1.2
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4128
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 10 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 20 70 VDS=12.5V ID=20A Capacitance (pF) 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 Crss 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 5 25 Coss Ciss
1000
500 RDS(ON) limited 10us Power (W) 100us 400 300 200 100 0 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.1 100 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) TJ(Max)=175C Tc=25C
100 ID (Amps)
10
DC
1ms 10ms
1
TJ(Max)=175C TC=25C
0.1 0.01
ZJC Normalized Transient Thermal Resistance
1
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=1C/W
In descending order D=0.5, 0.3, 0.1, 0.05, single pulse
0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1
PD Ton
T 10 100
1
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4128
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200 ID(A), Peak Avalanche Current 100 80 60 40 20 0 0.0001 0.001 0 25 50 75 100 125 150 175 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability TCASE (C) Figure 13: Power De-rating (Note B)
150
TA=25C
100
50
0 0.00001
100 80 Current rating ID(A) Power (W) 0 25 50 75 100 125 150 175 60 40 20 0 TCASE (C) Figure 14: Current De-rating (Note B)
Power Dissipation (W)
500 400 300 200 100 0 1E-05 1E-04 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10 ZJA Normalized Transient Thermal Resistance 1 0.1 0.01
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Single Pulse Ton T
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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